NTE5728 Ver la hoja de datos (PDF) - NTE Electronics
Número de pieza
componentes Descripción
Fabricante
NTE5728 Datasheet PDF : 3 Pages
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Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Peak One–Cycle
Non–Repetitive Surge Current
IFSM t = 10ms Sinusoidal Half Wave, 100% VRRM 7150 A
t = 8.3ms Reapplied, Initial TJ = +130°C
7500 A
Maximum I2t for Fusing
Maximum I2pt
I2t
I2pt
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +130°C
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, 100% VRRM
Reapplied, Initial TJ = +130°C
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +130°C
t = 0.1 to 10ms, no voltage reapplied
8500
8900
255
233
361
330
3610
A
A
A2s
A2s
A2s
A2s
A2pt
Threshold Voltage, Low level
Threshold Voltage, High level
On–State Slope Resistance, Low Level
On–State Slope Resistance, High Level
Maximum On–State Voltage Drop
Maximum Holding Current
Maximum Latching Current
Maximum Peak Gate Power
Maximum Average Gate Power
Maximum Peak Gate Current
Maximum Peak Negative Gate Voltage
Maximum Required DC Gate Trigger
Voltage to Trigger
Maximum Required DC Gate Trigger
Current to Trigger
Maximum Gate Voltage that will not
Trigger
Maximum Gate Current that will not
Trigger
Maximum Rate of Rise of
Turned–On Current
Typical Delay Time
Typical Rise Time
Typical Turn–Off Time
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
PGM
PG(AV)
+IGM
–VGT
VGT
IGT
VGD
IGD
di/dt
td
tr
tq
TJ = +130°C, (16.7% x π x IT(AV) < I < π x IT(AV))
TJ = +130°C, (π x IT(AV) < I < 20 x π x IT(AV))
TJ = +130°C, (16.7% x π x IT(AV) < I < π x IT(AV))
TJ = +130°C, (π x IT(AV) < I < 20 x π x IT(AV))
TJ = +130°C, ITM = π x IT(AV), 180° Condition,
Av. Power = VT(TO) x IT(AV) + rt x (IT(RMS))2
Anode Supply = 12V, Initial IT = 30A, TJ = +25°C
Anode Supply = 12V, Resistive Load = 1Ω,
Gat Pulse: 10V, 100µs, TJ = +25°C
TJ = +130°C, tp ≤ 5ms
TJ = +130°C, f = 50Hz
TJ = +130°C, tp ≤ 5ms
TJ = +130°C, tp ≤ 5ms
TJ = –40°C Anode Supply = 12V,
TJ = +25°C Resistive Load: RA = 1Ω
TJ = +130°C
TJ = –40°C Anode Supply = 12V,
TJ = +25°C Resistive Load: RA = 1Ω
TJ = +130°C
TJ = +130°C, Rated VDRM Applied
0.97
1.00
0.60
0.57
1.44
500
1000
10
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.25
TJ = +130°C, Rated VDRM Applied
10
TJ = +130°C, ITM = 400A, Rated VDRM Applied
500
TJ = +25°C, Gate Current = 1A diG/dt = 1A/µs,
1.0
VD = 0.67% VDRM
2.0
TJ = +25°C, ITM = 300A, –dI/dt = 15A/µs, VR = 50V, 50–150
dV/dt = 20V/µs, Gate 0V, 100Ω
V
V
mΩ
mΩ
V
mA
mA
W
W
A
V
V
V
V
mA
mA
mA
V
mA
A/µs
µs
µs
µs
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