LX5503LQ Ver la hoja de datos (PDF) - Microsemi Corporation

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LX5503LQ

InGaP HBT 5-6GHz Power Amplifier

Microsemi Corporation 

LX5503

TM

®

InGaP HBT 5-6GHz Power Amplifier

PRODUCTION DATA SHEET

ELECTRICAL CHARACTERISTICS

Test conditions: Vcc=3.3V, Vref=2.86V, Icq=100mA, TA=25°C.

Parameter

Condition Symbol Min. Typ.

Frequency Range

f

5.15

Output Power at 1dB

Compression

Pout

24

25

Power Gain at Pout=18dBm

Gp

20

22

EVM at Pout=18dBm

64QAM/54Mbps

4

Total Current at Pout=18dBm

Ic_total

200

Quiescent Current

Icq

100

Bias Control Reference Current For Icq=100mA

Iref

1.6

Small-Signal Gain

S21

21

Gain Flatness

Over 100MHz

ΔS21

+/-0.2

Gain Variation Over

Temperature

-40 to +85oC

ΔS21

+/-1

Input Return Loss

S11

-15

Output Return Loss

S22

-9

Reverse Isolation

S12

-40

Second Harmonic

Pout = 18dBm

-45

Third Harmonic

Pout = 18dBm

-37

Noise Figure

NF

6

Ramp-On Time

10~90%

tON

100

Note: All measured data was obtained on a 5 mil GETEK evaluation board without heat sink.

Max.

5.35

-10

Min.

5.7

24

16

Typ.

25

18

4

180

100

1.6

17

+/-0.5

+/-1

-12

-10

-40

-42

-37

6

100

Max.

5.85

-10

Unit

GHz

dBm

dB

%

mA

mA

mA

dB

dB

dB

dB

dB

dB

dBc

dBc

dB

ns

Copyright © 2000

Rev. 1.2d, 8/18/2005

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 3

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