HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6801
Issued Date : 1995.11.17
Revised Date : 2002.10.24
Page No. : 1/3
HBAV70
SWITCHING DIODE
Description
The HBAV70 consists of two diodes in a plastic surface mount
package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and
thin-film circuits.
SOT-23
Features
• Small SMD Package (SOT-23)
• Ultra-high Speed
• Low Forward Voltage
• Fast Reverse Recovery Time
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -65 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW
• Maximum Voltages and Currents (Ta=25°C)
Reverse Voltage .................................................................................................................. 70 V
Forward Current ............................................................................................................. 200 mA
Repetitive Forward Current ............................................................................................ 500 mA
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
Condition
Min Max Unit
V(BR) IR=100uA
70 - V
VF(1) IF=1mA
- 715 mV
VF(2) IF=10mA
- 855 mV
VF(3) IF=50mA
- 1100 mV
VF(4) IF=100mA
- 1300 mV
IR VR=70
- 5 uA
CT VR=0, f=1MHz
- 1.5 pF
Trr
IF=IR=10mA, RL=100Ω
measured at IR=1mA, VR=5V
-
15 nS
HBAV70
HSMC Product Specification