APT50M75JLLU2 Ver la hoja de datos (PDF) - Advanced Power Technology

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componentes Descripción

Fabricante

APT50M75JLLU2

POWER MOS 7™

Advanced Power Technology 

APT50M75JLLU2

Diode Specifications Section

MAXIMUM RATINGS (UltraFast Recovery Diode)

All Ratings: TC = 25°C unless otherwise specified.

Symbol Characteristic / Test Conditions

APT50M75JLLU2

UNIT

VR

Maximum D.C. Reverse Voltage

VRRM

L VRWM

A IF(AV)

NIC IF(RMS)

H IFSM

EC N TJ,TSTG

T IO TL

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current (TC = 80°C, Duty Cycle = 0.5)

RMS Forward Current

Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS)

Operating and StorageTemperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

NCE AT STATIC ELECTRICAL CHARACTERISTICS

VA RM Symbol Characteristic / Test Conditions

AD INFO VF

Maximum Forward Voltage

IF = 30A

IF = 60A

600

30

60

320

-55 to 150

300

MIN TYP MAX

1.8

1.5

IF = 30A, TJ = 150°C

1.6

Maximum Reverse Leakage Current

IRM

CT

Junction Capacitance, VR = 200V

VR = VR Rated

VR = VR Rated, TJ = 125°C

250

500

40

Volts

Amps

°C

UNIT

Volts

µA

pF

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