BUZ 76
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 400 V, VGS = 0 V, Tj = 25 °C
VDS = 400 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 2 A
Symbol
min.
Values
Unit
typ.
max.
V(BR)DSS
400
-
VGS(th)
2.1
3
IDSS
-
0.1
-
10
IGSS
-
10
RDS(on)
-
1.4
V
-
4
µA
1
100
nA
100
Ω
1.8
Semiconductor Group
2
07/96