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HT16G2T4 Ver la hoja de datos (PDF) - Holtek Semiconductor

Número de pieza
componentes Descripción
Fabricante
HT16G2T4
Holtek
Holtek Semiconductor Holtek
HT16G2T4 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
HT16x2Tx/HT12x2Tx
216/212 RF Encoder
Absolute Maximum Ratings
Logic Supply Voltage ........................................................................................................ 2V to 3.6V
Logic Input Voltage ......................................................................................... VSS-0.3V to VDD+0.3V
Storage Temperature ................................................................................................... -55°C to 150°C
Operating Temperature ................................................................................................. -40°C to 85°C
Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other
conditions beyond those listed in the specification is not implied and prolonged exposure to extreme
conditions may affect device reliability.
Specifications apply for VDD = 3.0V, Ta = 25°C, Freq X’talOSC = 13.560MHz, EN = VDD. Bold values indicate
–20°C to70°C unless otherwise noted. 1kbps data rate 50% duty cycle. RL 50ohm load (matched)
Symbol
Parameter
VIH “H” Input Voltage
VIL “L” Input Voltage
RPH Pull-high Resistance
Td
One bit data width for
HT12x2Tx/HT16x2Tx
Test Conditions
VDD
Conditions
3 Dx
3
Min. Typ. Max. Units
0.8VDD
V
— 0.2VDD V
150
0.9
1.0
1.1
ms
I1
Data High Current
I0
Data Low current
3V
@ 315MHz, POUT = +10dBm
@ 433.92MHz
3V
@ 315MHz
@ 433.92 MHz
— 13.5 —
mA
3.0
mA
ISTBY DIN disabled current
3V
1
µA
RF and Crystal
— Output power level
Harmonic output for
315 MHz
3V
@315MHz, VDD=3.3V
@433.92MHz, VDD=3.3V
3V
@630MHz, 2nd harm.
@945MHz, 3rd harm.
10
— dBm
-43
-52
dBc
Harmonic output for
433.92 MHz
3V
@867.84MHz, 2nd harm.
@1301.76MHz, 3rd harm.
-40
-47
dBc
Extinction ratio for ASK
10Kbps
3V
70
dBc
— Occupied Bandwidth
3V
@315MHz
@433.92MHz
<700
<1000
kHz
315 MHz Single Side
Band Phase Noise
3V
@ 100kHz from Carrier
@ 1000kHz from Carrier
-73
-77
— dBc/Hz
433.92 MHz Single
Side Band Phase Noise
3V
@ 100kHz from Carrier
@ 1000kHz from Carrier
-72
-76
— dBc/Hz
— XTLIN, XTLOUT
3V Pin capacitance
2
pF
See application circuit C3, C4
— External Capacitance 3V @315MHz
@433.92MHz
15
18
pF
— Output Blanking
3V
STDBY transition from LOW to
HIGH (=Pilot period)
12
bits
ASK to RF Out
Response Time
Delta between ASK Input Transition
3V from Low to High to RF Output
1
μs
Transition from Low to High
Rev. 1.00
4
January 28, 2011

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