IRF5851
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20 — —
P-Ch -20 — —
V
N-Ch
P-Ch
— 0.016 —
— -0.011 —
V/°C
N-Ch
—
—
P-Ch —
—
— 0.090
—
—
0.120
0.135
Ω
— 0.220
N-Ch 0.60 — 1.25
P-Ch -0.45 — -1.2
V
N-Ch 5.2 — —
P-Ch 3.5 — —
S
N-Ch — — 1.0
P-Ch — — -1.0
N-Ch — — 25 µA
P-Ch — — -25
N-P –– — ±100
N-Ch — 4.0 6.0
P-Ch — 3.6 5.4
N-Ch — 0.95 —
P-Ch — 0.66 —
nC
N-Ch — 0.83 —
P-Ch — 5.7 —
N-Ch — 6.6 —
P-Ch — 8.3 —
N-Ch — 1.2 —
P-Ch —
N-Ch —
14
15
—
—
ns
P-Ch — 31 —
N-Ch — 2.4 —
P-Ch — 28 —
N-Ch — 400 —
P-Ch — 320 —
N-Ch —
P-Ch —
48
56
—
—
pF
N-Ch — 32 —
P-Ch — 40 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.7A
VGS = 2.5V, ID = 2.2A
VGS = -4.5V, ID = -2.2A
VGS = -2.5V, ID = -1.7A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 2.7A
VDS = -10V, ID = -2.2A
VDS = 16 V, VGS = 0V
VDS = -16V, VGS = 0V
VDS = 16 V, VGS = 0V, TJ = 70°C
VDS = -16V, VGS = 0V, TJ = 70°C
VGS = ± 12V
N-Channel
ID = 2.7A, VDS = 10V, VGS = 4.5V
P-Channel
ID = -2.2A, VDS = -10V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.2Ω,
VGS = 4.5V
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0Ω,
VGS = -4.5V
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Min.
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
Typ. Max. Units
— 0.96
— -0.96 A
— 11
— -9.0
— 1.2 V
— -1.2
25 38 ns
23 35
6.5 9.8 nC
7.7 12
Conditions
TJ = 25°C, IS = 0.96A, VGS = 0V
TJ = 25°C, IS = -0.96A, VGS = 0V
N-Channel
TJ = 25°C, IF = 0.96A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -0.96A, di/dt = -100A/µs
Surface mounted on FR-4 board, t ≤ 10sec.
2
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