UPG110P Ver la hoja de datos (PDF) - NEC => Renesas Technology

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Fabricante

UPG110P

2-8 GHz WIDE-BAND AMPLIFIER

NEC => Renesas Technology 

2-8 GHz WIDE-BAND AMPLIFIER

UPG110B

UPG110P

FEATURES

• WIDE-BAND: 2 to 8 GHz

• HIGH GAIN: 15 dB at f = 2 to 8 GHz

• MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz

• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω

• HERMETICALLY SEALED PACKAGE ASSURES HIGH

RELIABILITY

DESCRIPTION

The UPG110B is a GaAs monolithic integrated circuit de-

signed for use as a wide-band amplifier from 2 GHz to 8 GHz.

The device is most suitable for the gain stage of microwave

communication systems where high gain characteristics are

required. The UPG110 is available in a 4 pin flat package and

in chip form.

GAIN vs. FREQUENCY AND TEMPERATURE

20

15

10

5

0

-5

-10

0

2

4

6

8

Frequency, f (GHz)

T = -25˚C

T = +25˚C

T = +75˚C

10

ELECTRICAL CHARACTERISTICS1 (TA = 25 ± 3°C, ZS = ZL = 50 Ω, VDD = +8 V, f = 2.0 to 8.0 GHz)

SYMBOLS

IDD

GP

∆GL

RLIN

RLOUT

ISOL

P1dB

IP3

PART NUMBER

PACKAGE OUTLINE

PARAMETERS

Supply Current

Power Gain

Gain Flatness

Input Return Loss

Output Return Loss

Isolation

Output Power at 1 dB Compression Point

SSB Third Order Intercept Point

UNITS

mA

dB

dB

dB

dB

dB

dBm

dBm

UPG110B/P

FA/CHIP

MIN

TYP

65

135

12

15

6

10

7

10

30

40

10

14

25

Note:

1. When handling the device, a ground strap should be used to prevent electric static discharge (ESD) that can damage the IC.

MAX

180

±1.5

California Eastern Laboratories

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