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PS200-I/SO

PowerSmart® Configurable Battery Charger

Microchip Technology 

PS200

5.3 DC Characteristics

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C to +85°C

Param

No.

Sym

Characteristic

Min Typ† Max Units

Conditions

D001B VDD Supply Voltage

2.0 — 5.0

D001C

4.5 — 5.0

D002 VDR RAM Data Retention Voltage(1) 1.5* —

—

V FOSC <= 4 MHz

V FOSC > 4 MHz

V Device in Sleep mode

D003 VPOR VDD Start Voltage to ensure

— VSS —

internal Power-on Reset signal

V See section on Power-on Reset

for details

D004 SVDD VDD Rise Rate to ensure internal 0.05* —

Power-on Reset signal

— V/ms See section on Power-on Reset

for details

D005 VBOR VDD Voltage required to initiate a — 2.1 —

V

Brown-out Detect

D010S IDD Supply Current(2)

——

—

mA VDD and current are constant due

to shunt regulator.

D020 IPD Power-Down Current(3)

— 2.9 TBD nA VDD = 5.0V, WDT disabled

Legend: TBD = To Be Determined

* These parameters are characterized but not tested.

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested

Note 1: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.

2: The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave,

from rail to rail; all I/O pins tri-stated, pulled to VDD; RESET = VDD.

3: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is

measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD and VSS.

5.4 Shunt Regulator

TABLE 5-1: SHUNT REGULATOR SPECIFICATIONS

Shunt Regulator Specifications

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C to +125°C

Characteristic

Sym

Min

Typ

Max

Units

Comments

Shunt Voltage

VSHUNT

4.75

—

5.25

Volts

Shunt Current

ISHUNT

4

—

50

mA

Shunt Resistance

RSHUNT

—

—

3

Ω

Settling Time*

TSETTLE

—

—

150

ns To 1% of final value

Load Capacitance

CLOAD

0.01

—

10

μF Bypass capacitor on

VDD pin

Regulator Operating Current

ΔISNT

—

180

—

μA Includes band gap

reference current

* These parameters are characterized but not tested.

Note: The Δ current is the additional current consumed when this peripheral is enabled. This current should be

added to the base IDD or IPD measurement.

DS21891B-page 16

© 2005 Microchip Technology Inc.

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