PBSS2515E,115 Ver la hoja de datos (PDF) - NXP Semiconductors.
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PBSS2515E,115 Datasheet PDF : 12 Pages
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NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
1
VCEsat
(V)
10−1
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1
VCEsat
(V)
10−1
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10−2
(1)
(2)
(3)
10−3
10−1
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
102
RCEsat
(Ω)
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10
1
(1)
(2)
(3)
(1)
(2)
10−2
(3)
10−3
10−1
1
10
102
103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
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(1)
10
(2)
1
(3)
10−1
10−1
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10−1
10−1
1
10
102
103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS2515E_2
Product data sheet
Rev. 02 — 21 April 2009
© NXP B.V. 2009. All rights reserved.
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