NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
duty cycle =
1
0.75
0.5
0.33
102 0.2
0.1
0.05
0.02
10
0.01
0
006aab472
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10 0.01
0
006aaa413
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS2515E_2
Product data sheet
Rev. 02 — 21 April 2009
© NXP B.V. 2009. All rights reserved.
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