MX26C1000B Ver la hoja de datos (PDF) - Macronix International
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MX26C1000B Datasheet PDF : 23 Pages
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MX26C1000B
AC CHARACTERISTICS - WRITE/ERASE/PROGRAM OPERATIONS
Symbol
Parameter
90
100
120
150
Unit
JEDED STD
MIN MAX MIN MAX MIN MAX MIN MAX
tAVAV TWC Write Cycle Time (Note 3)
90
100
120
150
ns
tAVWL TAS Address Setup Time
0
0
0
0
ns
tWLAX TAH Address Hold Time
40
40
40
40
ns
tDVWH TDS Data Setup Time
40
40
40
40
ns
tWHDX TDH Data Hold Time
10
10
10
10
ns
tWHGL TWR Write Recovery Time Before Read
6
6
6
6
us
tGHWL TDES Read Recovery Time Before Write
0
0
0
0
us
tELWL tCS CE Setup Time Before Write
0
0
0
0
ns
tWHEH tCH CE Hold Time
0
0
0
0
ns
tWLWH tWP Write Pulse Width
50
50
50
50
ns
tWHWL tWPH Write Pulse Width High
20
20
20
20
ns
tWHWH1
Duration of Programming Operation 10
10
10
10
us
(Note2)
tWHWH2
Duration of Erase Operation(Note2)
100
100
100
100
ms
tVPEL
VPP Setup Time to Chip Enable Low 1
1
1
1
us
(Note 3)
tVCS
VCC Setup Time to Chip Enable Low 50
50
50
50
us
(Note 3)
tVPPR
VPP Rise Time (Note 3) 90% VPPH 500
500
500
500
ns
tVPPF
VPP Fall Time (Note 3) 10% VPPH 500
500
500
500
ns
Note:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to
AC Characteristics for Read Only Operations.
2. Maximum pulse widths not required because the on-chip program/erase circuitry will terminate the pulse widths
internally on the device.
3. Not 100% tested.
P/N: PM0767
12
REV. 0.7, NOV. 20, 2002
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