60
TJ = 25°C
50
40
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V
6V
8V
60
VDS ≥ 10 V
50
40
MTY30N50E
30
5V
20
10
4V
0
0
2
4
6
8
10
12
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
30
20
100°C
TJ = – 55°C
10
25°C
0
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.35
0.3 VGS = 10 V
0.25
TJ = 100°C
0.2
0.15
25°C
0.1
– 55°C
0.05
0
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.17
TJ = 25°C
0.16
0.15
VGS = 10 V
0.14
15 V
0.13
0.12
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
2
ID = 15 A
1.5
1
0.5
0
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10000
1000
TJ = 125°C
100°C
100 VGS = 0 V
10
25°C
1
0
100
200
300
400
500
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3