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MMBV3700LT1G Datasheet PDF : 3 Pages
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MMBV3700LT1G
High Voltage Silicon Pin
Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general−purpose switching
circuits. They are supplied in a cost−effective plastic package for
economical, high−volume consumer and industrial requirements.
They are also available in surface mount.
Features
• Long Reverse Recovery Time trr = 300 ns (Typ)
• Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
• Low Series Resistance @ 100 MHz −
RS = 0.7 W (Typ) @ IF = 10 mA
• Reverse Breakdown Voltage = 200 V (Min)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Symbol
VR
PD
Value
200
200
2.8
Unit
V
mW
mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
SOT−23
1
Anode
3
Cathode
3
1
2
MARKING
DIAGRAM
4R M G
G
1
SOT−23 (TO−236AB)
CASE 318 −08
STYLE 8
4R = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBV3700LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 5
Publication Order Number:
MMBV3700LT1/D
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