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MJF13007 Datasheet PDF : 12 Pages
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ON Semiconductort
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE13007 is designed for high–voltage, high–speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V switchmode applications such as Switching
Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and
Deflection circuits.
• VCEO(sus) 400 V
• Reverse Bias SOA with Inductive Loads @ TC = 100°C
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Standard TO–220
MAXIMUM RATINGS
Rating
Symbol
MJE13007
Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Base Current — Peak (1)
Emitter Current — Continuous
Emitter Current — Peak (1)
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
400
Vdc
700
Vdc
9.0
Vdc
8.0
Adc
16
4.0
Adc
8.0
12
Adc
24
80
Watts
0.64
W/°C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
RθJC
RθJA
°1.56°
°62.5°
°C/W
Maximum Lead Temperature for Soldering
TL
Purposes: 1/8″ from Case for 5
Seconds
260
°C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the
*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied
*at a mounting torque of 6 to 8•lbs.
MJE13007
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
80 WATTS
CASE 221A–09
TO–220AB
MJE13007
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 3
Publication Order Number:
MJE13007/D
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