MJD112 Ver la hoja de datos (PDF) - Motorola => Freescale
Número de pieza
componentes Descripción
Fabricante
MJD112 Datasheet PDF : 6 Pages
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1
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07 0.01
0.05
0.03 SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
MJD112 MJD117
RθJC(t) = r(t) RθJC
RθJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5
1
2 3 5 10
t, TIME OR PULSE WIDTH (ms)
20 30 50
Figure 3. Thermal Response
100 200 300 500 1000
ACTIVE–REGION SAFE–OPERATING AREA
10
7
5
100 µs
3
2
500 µs
1
0.7
1 ms
5 ms
0.5
dc
0.3
0.2
BONDING WIRE LIMITED
0.1
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
2 3 5 7 10
20 30 50 70 100
200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
TA TC
2.5 25
2 20
1.5 15
1 10
0.5 5
00
25
TA
TC
SURFACE
MOUNT
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 5. Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
Motorola Bipolar Power Transistor Device Data
200
TC = 25°C
100
70
50
Cob
30
20
10
0.04 0.06 0.1
PNP
NPN
0.2 0.4 0.6 1
Cib
2 4 6 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
3
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