MBRM120ET1 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MBRM120ET1

Surface Mount Schottky Power Rectifier

ON Semiconductor 

1000

100

MBRM120E

150

TJ = 25°C

148

146

Rtja = 33.72°C/W

51°C/W

69°C/W

83.53°C/W

96°C/W

10

0 2.0 4.0 6.0 8.0 10 12 14 16 18 20

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

144

0 2.0 4.0 6.0 8.0 10 12 14 16 18 20

VR, DC REVERSE VOLTAGE (VOLTS)

Figure 8. Typical Operating Temperature Derating*

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-

verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating

TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where

r(t) = thermal impedance under given conditions,

Pf = forward power dissipation, and

Pr = reverse power dissipation

This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,

where r(t) = Rthja. For other power applications further calculations must be performed.

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