MBRM120ET1(2001) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MBRM120ET1
(Rev.:2001)

Surface Mount Schottky Power Rectifier

ON Semiconductor 

MBRM120E

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

25

dc

FREQ = 20 kHz

SQUARE WAVE

Ipk/Io = p

Ipk/Io = 5

Ipk/Io = 10

Ipk/Io = 20

45 65 85 105 125 145 165

TL, LEAD TEMPERATURE (°C)

Figure 5. Current Derating

0.7

dc

SQUARE

0.6

WAVE

Ipk/Io = p

0.5

Ipk/Io = 5

0.4

Ipk/Io = 10

0.3

Ipk/Io = 20

0.2

0.1

0

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 6. Forward Power Dissipation

1000

100

150

TJ = 25°C

148

146

Rtja = 33.72°C/W

51°C/W

69°C/W

83.53°C/W

96°C/W

10

0 2.0 4.0 6.0 8.0 10 12 14 16 18 20

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

144

0 2.0 4.0 6.0 8.0 10 12 14 16 18 20

VR, DC REVERSE VOLTAGE (VOLTS)

Figure 8. Typical Operating Temperature Derating*

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-

verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating

TJ may be calculated from the equation:

TJ = TJmax – r(t)(Pf + Pr) where

r(t) = thermal impedance under given conditions,

Pf = forward power dissipation, and

Pr = reverse power dissipation

This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,

where r(t) = Rthja. For other power applications further calculations must be performed.

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