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MBRD1035CTLG(2010) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MBRD1035CTLG
(Rev.:2010)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBRD1035CTLG Datasheet PDF : 6 Pages
1 2 3 4 5 6
MBRD1035CTL
8.0
dc
7.0
SQUARE WAVE
6.0
(50% DUTY CYCLE)
5.0
Ipk/Io = p
4.0
Ipk/Io = 5
3.0
Ipk/Io = 10
2.0
Ipk/Io = 20
1.0
freq = 20 kHz
0
0
20
40
60
80 100 120 140
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating Per Leg
4.0
SQUARE WAVE
3.5
(50% DUTY CYCLE) dc
3.0
Ipk/Io = p
2.5
Ipk/Io = 5
2.0
Ipk/Io = 10
1.5 Ipk/Io = 20
1.0
0.5
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation Per Leg
1000
100
10
0
TJ = 25°C
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance Per Leg
125
RqJA = 2.43°C/W
115
105
RqJA = 48°C/W
RqJA = 25°C/W
95
RqJA = 67.5°C/W
85
75
RqJA = 84°C/W
65
0
5
10
15
20
25
30
35
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating Per Leg *
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any
reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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