MB1M(2016) Ver la hoja de datos (PDF) - HY ELECTRONIC CORP.
Número de pieza
componentes Descripción
Fabricante
MB1M Datasheet PDF : 3 Pages
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MB05M thru MB10M
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
●Rating to 1000V PRV
●Ideal for printed circuit board
●Reliable low cost construction utilizing
molded plastic technique results in inexpensive product
●Lead tin plated copper
MECHANICAL DATA
●Polarity:Symbol molded on body
●Weight: 0.0044 ounces,0.125 grams
●Mounting position :Any
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 0.8 Ampere
MBM
.051(1.3)
.035(0.9)
.165(4.2)
.146(3.7)
C0.5
.031(0.8)
.019(0.5)
.106(2.7)
.090(2.3)
.193(4.9)
.177(4.5)
.014(.35)
.006(.15)
.256(6.5)
.217(5.5)
.106(2.7)
.090(2.3)
.217(5.5)
.177(4.5)
.031(0.8)
.019(0.5)
.106(2.7)
.090(2.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (Note 1)
@TA=40 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
I2t Rating for Fusing (t<8.3ms)
Peak Forward Voltage at 0.8A DC
Maximum DC Reverse Current
@TJ=25℃
at Rated DC Bolcking Voltage
@TJ=125℃
Typical Junction Capacitance Per Element (Note2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
SYMBOL MB05M
VRRM
50
VRMS
35
VDC
50
I(AV)
IFSM
I2t
VF
IR
CJ
RθJA
TJ
TSTG
NOTES:1.Mounted on P.C. board.
2.Measured at1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
4.The typical data above is for reference only(典型值仅供参考).
MB1M
100
70
100
MB2M
200
140
200
MB4M
400
280
400
MB6M
600
420
600
0.8
30
3.7
1.05
5
500
15
80
-55 to +150
-55 to +150
MB8M
800
560
800
MB10M
1000
700
1000
UNIT
V
V
V
A
A
A2s
V
μA
pF
℃/W
℃
℃
Rev. 8, 16-Mar-2016
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