M6MGB166S2BWG Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

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M6MGB166S2BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M6MGB/T166S2BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS

3.3V-ONLY FLASH MEMORY &

2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM

Stacked-CSP (Chip Scale Package)

BLOCK LOCKING

F-RP#

VIL

VIH

F-WP#

X

VIL

VIH

Lock

Write Protection Provided

Bit

(Internally)

BANK(I)

BANK(II)

Lock Bit

Boot Parameter Data

X

Locked Locked Locked Locked

0

Locked Locked Locked Locked

1

Locked Unlocked Unlocked Locked

X

Unlocked Unlocked Unlocked Unlocked

Note

Deep Power Down Mode

All Blocks Unlocked

1) DQ6 provides Lock Status of each block after writing the Read Lock Status command (71H).

F-WP# pins must not be switched during performing Erase / Write operations or WSM Busy (WSMS = 0).

2) Erase/Write command for locked blocks is aborted. At this time read mode is not array read mode but status read mode and

00B0H is read. Please issue Clear Status Register command plus Read Array command to change the mode from status read mode

to array read mode.

STATUS REGISTER

Symbol

Status

SR.7 (DQ7)

SR.6 (DQ6)

SR.5 (DQ5)

SR.4 (DQ4)

SR.3 (DQ3)

SR.2 (DQ2)

SR.1 (DQ1)

SR.0 (DQ0)

Write State Machine Status

Suspend Status

Erase Status

Program Status

Block Status after Program

Reserved

Reserved

Reserved

"1"

Ready

Suspended

Error

Error

Error

-

-

-

Definition

"0"

Busy

Operation in Progress / Completed

Successful

Successful

Successful

-

-

-

*The F-RY/BY# is an open drain output pin and indicates status of the internal WSM. When low,it indicates that the WSM is Busy performing an operation.

A pull-up resistor of 10K-100K Ohms is required to allow the F-RY/BY# signal to transition high indicating a Ready WSM condition.

*DQ3 indicates the block status after the page programming, word programming and page buffer to flash. When DQ3 is "1", the page has the over-programed

cell . If over-program occurs, the device is block fail. However if DQ3 is "1", please try the block erase to the block. The block may revive.

9

Nov 1999 , Rev.2.3

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