TZA3043 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

TZA3043

Gigabit Ethernet/Fibre Channel transimpedance amplifier

Philips Electronics 

Philips Semiconductors

Gigabit Ethernet/Fibre Channel

transimpedance amplifier

Product specification

TZA3043; TZA3043B

Physical characteristics of the bare die

PARAMETER

Gold layer(1)

Glass passivation

Bonding pad dimension

Metallization

Thickness

Size

Backing

Attach temperature

Attach time

VALUE

2.8 µm Au + 3.2 µm TiW

2.1 µm PSG (PhosphoSilicate Glass) on top of 0.65 µm oxynitride

minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm)

1.22 µm W/AlCu/TiW

380 µm nominal

1.03 × 1.30 mm (1.34 mm2)

silicon; electrically connected to GND potential through substrate contacts

<440 °C; recommended die attach is glue

<15 s

Note

1. For the TZA3043BU/G and TZA3043U/G versions only.

2002 Sep 06

21

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