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Número de pieza
componentes Descripción
NE76118-T2 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
NE76118-T2
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NEC => Renesas Technology
NE76118-T2 Datasheet PDF : 8 Pages
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NE76118
RECOMMENDED OPERATING CONDITION (T
A
= 25
q
C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
V
DS
I
D
P
in
MIN.
TYP.
3
10
MAX.
4
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= 25
q
C)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Noise Figure
Associated Gain
SYMBOL
I
GSO
I
DSS
V
GS(off)
gm
NF
Ga
NF
Ga
MIN.
ð
30
ð
0.5
20
9.5
TYP.
ð
ð
ð
45
0.8
13.5
0.9
10.5
MAX.
10
100
ð
3.0
ð
1.4
UNIT
P
A
mA
V
mS
dB
dB
dB
dB
TEST CONDITIONS
V
GS
=
ð
5 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
D
= 100
P
A
V
DS
= 3 V, I
D
= 10 mA
f = 2 GHz
V
DS
= 3 V
I
D
= 10 mA,
f = 4 GHz
I
DSS
rank is specified as follows.
K : 30 to 100 mA
M : 50 to 100 mA
2
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