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NE76118-T2 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza
componentes Descripción
Fabricante
NE76118-T2
NEC
NEC => Renesas Technology NEC
NE76118-T2 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NE76118
RECOMMENDED OPERATING CONDITION (TA = 25 qC)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
3
10
MAX.
4
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = 25 qC)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Noise Figure
Associated Gain
SYMBOL
IGSO
IDSS
VGS(off)
gm
NF
Ga
NF
Ga
MIN.
ð
30
ð0.5
20
9.5
TYP.
ð
ð
ð
45
0.8
13.5
0.9
10.5
MAX.
10
100
ð3.0
ð
1.4
UNIT
PA
mA
V
mS
dB
dB
dB
dB
TEST CONDITIONS
VGS = ð5 V
VDS = 3 V, VGS = 0 V
VDS = 3 V, ID = 100 PA
VDS = 3 V, ID = 10 mA
f = 2 GHz
VDS = 3 V
ID = 10 mA,
f = 4 GHz
IDSS rank is specified as follows.
K : 30 to 100 mA
M : 50 to 100 mA
2

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