HY27UG088G5B Ver la hoja de datos (PDF) - Hynix Semiconductor

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HY27UG088G5B

8Gbit (1Gx8bit) NAND Flash

Hynix Semiconductor 

1

HY27UG088G(5/D)B Series

8Gbit (1Gx8bit) NAND Flash

Parameter

Valid Block

Number

Symbol

Min

Typ

Max

NVB

8032

-

8192

Table 6 : Valid Blocks Numbers

NOTE:

1. The 1st block is guaranteed to be a valid block at the time of shipment.

2. The number of valid blocks is for single plane & multi-plane operations.

3. Each chip has maximum 80 invalid blocks.

Unit

Blocks

Symbol

TA

TBIAS

TSTG

VIO(2)

Vcc

Parameter

Ambient Operating Temperature (Commercial Temperature Range)

Ambient Operating Temperature (Industrial Temperature Range)

Temperature Under Bias

Storage Temperature

Input or Output Voltage

Supply Voltage

Value

0 to 70

-40 to 85

-50 to 125

-65 to 150

-0.6 to 4.6

-0.6 to 4.6

Unit

℃

℃

℃

V

V

V

Table 7: Absolute maximum ratings

NOTE:

1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute

Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of

the device at these or any other conditions above those indicated in the Operating sections of this specification is

not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

Refer also to the Hynix SURE Program and other relevant quality documents.

2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.

Rev 0.2 / Jan. 2008

18

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