GMS81C1102 Ver la hoja de datos (PDF) - Hynix Semiconductor

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GMS81C1102

8-BIT SINGLE-CHIP MICROCONTROLLERS

Hynix Semiconductor 

GMS81C1102 / GMS81C1202

10. ELECTRICAL CHARACTERISTICS -GMS81C1102, GMS81C1202

10.1 Absolute Maximum Ratings - GMS81C1102, GMS81C1202

Supply voltage ........................................... -0.3 to +6.5 V

Storage Temperature ................................-40 to +125 °C

Maximum current (ΣIOL) .................................... 150 mA

Maximum current (ΣIOH).................................... 100 mA

Voltage on any pin with respect to Ground (VSS)

............................................................... -0.3 to VDD+0.3

Maximum current out of VSS pin ........................200 mA

Maximum current into VDD pin ..........................150 mA

Maximum current sunk by (IOL per I/O Pin) ........25 mA

Maximum output current sourced by (IOH per I/O Pin)

...............................................................................15 mA

Note: Stresses above those listed under "Absolute Maxi-

mum Ratings" may cause permanent damage to the

device. This is a stress rating only and functional op-

eration of the device at any other conditions above

those indicated in the operational sections of this

specification is not implied. Exposure to absolute

maximum rating conditions for extended periods

may affect device reliability.

10.2 Recommended Operating Conditions - GMS81C1102, GMS81C1202

Parameter

Symbol

Supply Voltage

VDD

Operating Frequency

Operating Temperature

fXIN

TOPR

Condition

fXIN=8MHz

fXIN=4.2MHz

VDD=4.5~6.0V

VDD=2.2~6.0V

Specifications

Min.

Max.

4.5

6.0

2.2

6.0

1

8

1

4.2

-20

85

Unit

V

MHz

°C

10

Jan. 2002 ver 2.0

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