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GMS30C2116 Ver la hoja de datos (PDF) - Hynix Semiconductor

Número de pieza
componentes Descripción
Fabricante
GMS30C2116
Hynix
Hynix Semiconductor Hynix
GMS30C2116 Datasheet PDF : 322 Pages
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Overview
0-9
0.3. Pin Configuration (continued)
0.3.3 Pin Function
Type
Name State
Use
Power
VCC
I Power. Connected to the power supply. It can be
selected 5.0V or 3.3V power supply.
GND
I Ground. Connected to the system ground. All GND
pins must be connected to the system ground.
Clock
XTAL1
I Input for Quartz Clock. When external clock
generator generates the clock, XTAL1 is used as
clock input.
XTAL2
O Output for Quartz Clock.
CLKOUT
O Clock Signal Output. It can be used to supply a
clock signal to peripheral devices.
Address Bus A25..A0
O/Z Address Bus. With the GMS30C2132, only A22..A0
are connected to the address bus pins
Data Bus D31..D0 I/O Data Bus. 32-bit bi-directional data bus
DP0..DP3 I/O Data Parity Signal. Bi-directional parity signals
Bus Control RAS#
O/Z Row Address Strobe. RAS# is activated when the
processor accesses a DRAM or refresh cycle. When
a SRAM is placed in MEM0, RAS# is used as the
chip select signal
CAS0#..CAS O/Z Column Address Strobe. They are only used by a
3#
DRAM for column access cycles and for “CAS
before RAS” refresh.
WE#
O/Z Write Enable. Active low indicates a write access,
active high indicates a read access.
CS1#..CS3# O/Z Chip Select. Active low of CS1#..CS3# indicates
chip select for the memory areas MEM1..MEM3.
WE0#..WE3# O/Z SRAM Write Enable. Active low indicates write
enable for the corresponding byte.
OE#
O/Z Output Enable for SRAM’s and EPROM’s.
IORD#
O/Z I/O Read Strobe, optionally I/O Data Strobe. The
use of IORD# is specified in the I/O address bit 10.
IOWR# O/Z I/O Write Strobe.

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