FS10ASH-06 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
FS10ASH-06 Datasheet PDF : 5 Pages
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GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
5.0
Tch = 25°C
ID = 10A
4.0
VDS = 10V
3.0
20V
40V
2.0
1.0
0
0
4
8
12 16 20
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS10ASH-06
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
VGS = 0V
Pulse Test
32
TC = 125°C
24
16
75°C
25°C
8
0
0
0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = 4V
5
4
ID = 1/2ID
Pulse Test
3
2
100
7
5
4
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
VDS = 10V
ID = 1mA
1.6
1.2
0.8
0.4
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101
7
5 D = 1.0
3 0.5
2
PDM
0.2
100
7
0.1
5
0.05
3
0.02
2
0.01
tw
T
D= tw
T
Single Pulse
10–110–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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