FS10ASH-06 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
FS10ASH-06 Datasheet PDF : 5 Pages
| |||
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
Tc = 25°C
Pulse Test
1.6
1.2
0.8
ID = 15A
10A
0.4
5A
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
Tc = 25°C
VDS = 10V
32
Pulse Test
24
16
8
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
104
7
5
3
2
Ciss
103
7
5
3
2
Coss
102
7
Crss
5
3 Tch = 25°C
2 f = 1MHZ
VGS = 0V
101
3 5 7 100 2 3
5 7 101 2 3
5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS10ASH-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
VGS = 2.5V
60
4V
40
20
0
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
5
TC = 25°C
VDS = 5V
Pulse Test
4
75°C
3
125°C
2
101
7
5
4
3
2
100100 2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
VDD = 30V
5
4
VGS = 4V
RGEN = RGS = 50Ω
3
2
102
td(off)
7
tf
5
4
tr
3
td(on)
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
Share Link: 