FS10ASH-06 Ver la hoja de datos (PDF) - Renesas Electronics
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FS10ASH-06 Datasheet PDF : 5 Pages
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MITSUBISHI Nch POWER MOSFET
FS10ASH-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 4V
ID = 5A, VGS = 2.5V
ID = 5A, VGS = 4V
ID = 5A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 5A, VGS = 4V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
60
—
—
V
—
—
±0.1 µA
—
—
0.1
mA
0.6
0.9
1.2
V
—
54
73
mΩ
—
64
95
mΩ
—
0.27 0.365 V
—
18
—
S
—
1150
—
pF
—
185
—
pF
—
80
—
pF
—
19
—
ns
—
45
—
ns
—
90
—
ns
—
65
—
ns
—
1.0
1.5
V
—
—
4.17 °C/W
—
55
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
5
3
tw = 10ms
2
101
7
5
100ms
3
2
1ms
100
7
10ms
5
DC
3
2
10–1
7
5 TC = 25°C
3 Single Pulse
2
2 3 5 7 100 2 3
5 7 101 2 3
5 7 102 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 5V 4V 3V
Tc = 25°C
Pulse Test
2.5V
16
PD = 30W
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 5V 4V 3V 2.5V
Tc = 25°C
2V
Pulse Test
8
12
6
2V
8
4
4
1.5V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
1.5V
2
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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