FCX1051A Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

Fabricante

FCX1051A

SOT89 NPN medium power transistor

Diodes Incorporated. 

FCX1051A

Absolute maximum ratings

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Peak pulse current(a)

Continuous collector current

Power dissipation at Tamb = 25°C

Operating and storage temperature range

Symbol

VCBO

VCEO

VEBO

ICM

IC

Ptot

Tj;Tstg

Value

150

40

5

10

3

1(b)

2(c)

-55 to +150

Unit

V

V

V

A

A

W

W

°C

NOTES:

(a) Measured under pulsed conditions. Pulse width=300␮s. Duty cycle Յ2%. Spice parameter data is available upon

request for these devices. Refer to the handling instructions for soldering surface mount components.

(b) Recommended Ptot calculated using FR4 measuring 15x15x0.6mm.

(c) Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring

40x40x0.6mm and using comparable measurement methods adopted by other suppliers.

Typical characteristics

Issue 2 - July 2007

2

© Zetex Semiconductors plc 2007

www.zetex.com

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