DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

EGL34AHE3/98 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
EGL34AHE3/98
Vishay
Vishay Semiconductors Vishay
EGL34AHE3/98 Datasheet PDF : 4 Pages
1 2 3 4
BYM07-50 thru BYM07-400, EGL34A thru EGL34G
Vishay General Semiconductor
100
Pulse Width = 300 µs
1 % Duty Cycle
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.2
EGL34A - EGL34D
EGL34F & EGL34G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
35
TJ = 25 °C
30
f = 1.0 MHz
Vsig = 50 mVp-p
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
1
0.1
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-213AA (GL34)
Solderable Ends
1st BAND
2nd BAND
D2
Mounting Pad Layout
0.079 (2.0)
MAX.
0.079 (2.0)
MIN.
0.022 (0.559)
0.016 (0.406)
0.145 (3.683)
0.131 (3.327)
1st band denotes type and polarity
2nd band denotes voltage type
D2
=
D1
+
-
0
0.008
(0.20)
0.049 (1.25)
MIN.
0.177 (4.5) REF.
www.vishay.com
630
For technical questions within your region, please contact one of the following: Document Number: 88580
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 27-Aug-08

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]