DF1506S Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

DF1506S

Bridge Rectifiers

TY Semiconductor 

■ Features

● Glass passivated chip junctions

● Low Forward Voltage Drop, High Current Capability

● Surge Overload Rating to 50A Peak

Product specification

DF15005S - DF1510S

DF-S

0.047 (1.20)

0.040 (1.02)

0.205 (5.2)

0.195 (5.0)

0.335 (8.51)

0.320 (8.13)

45o

0.130 (3.3) 0.013 (0.330)

0.120 (3.05) 0.009 (0.241)

0.404 (10.3)

0.386 (9.80)

0.255 (6.5)

0.245 (6.2)

0.060 (1.524)

0.040 (1.016)

0.013 (0.330)

0.003 (0.076)

Dimensions in inches and (millimeters)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol DF15005S DF1501S DF1502S DF1504S DF1506S DF1508S DF1510S Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRMM

VRWM

50

100

200

400

600

800 1000 V

VDC

RMS Reverse Voltage

VRMS

35

70

140

280

420

560

700 V

Average Forward Rectified Current TA=@ 40℃

IO

1.5

A

Non-Repetitive Peak Forward Surge Current, 8.3 ms

Single half-sine-wave Superimposed on Rated Load

IFSM

(JEDECmethod)

50

A

Forward Voltage (per element) @ IF = 1.5A

VF

1.1

V

Reverse Current(per element) @ Rated VR , TA = 25℃

IR

TA = 125℃

Rating for fusing (t < 8.3ms)

I2t

10

μA

500

10

A2s

Typical Total Capacitance (per element) (Note 1)

CJ

25

pF

Typical Thermal Resistance, Junction to Ambient (Note 2) RθJA

40

℃/W

Operating and Storage Temperature Range

Tj, Tstg

-55 to +150

℃

Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.

2.Device mounted on PCB with 0.5 × 0.5” (13 × 13mm).

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

1 of 2

Share Link: