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CT15SM-24 Ver la hoja de datos (PDF) - Renesas Electronics

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componentes Descripción
Fabricante
CT15SM-24
Renesas
Renesas Electronics Renesas
CT15SM-24 Datasheet PDF : 6 Pages
1 2 3 4 5 6
PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT15SM-24
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
V (BR) CES
IGES
ICES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Rth (j-c)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Thermal resistance
IC = 1mA, VGE = 0V
VGE = ±30V, VCE = 0V
VCE = 1200V, VGE = 0V
IC = 1.5mA, VCE = 10V
IC = 15A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 600V, Resistance load,
IC = 15A, VGE = 15V, RGE = 20
Junction to case
Min.
1200
4.5
Limits
Typ.
6.0
2.7
1600
150
45
50
150
150
250
Max.
±0.5
1
7.5
3.6
0.50
Unit
V
µA
mA
V
V
pF
pF
pF
ns
ns
ns
ns
°C/W
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
VGE = 20V (TYPICAL)
20
15V
Tj = 25°C
16
11V
12
8
10V
4
9V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
IC = 30A
15A
2
10A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999

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