NXP Semiconductors
Quadruple ESD transient voltage
suppressor
Product data sheet
BZA800A-series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
IZ
IF
IFSM
Ptot
PZSM
Tstg
Tj
working current
Tamb = 25 °C
continuous forward current
Tamb = 25 °C
non-repetitive peak forward current tp = 1 ms; square pulse
total power dissipation
Tamb = 25 °C
non repetitive peak reverse power square pulse; tp = 1 ms; see Fig.3
dissipation:
BZA856A, BZA862A, BZA868A,
BZA820A
storage temperature
junction temperature
Note
1. DC working current limited by Ptot(max).
MIN. MAX. UNIT
−
note 1 mA
−
200
mA
−
3.75 A
−
335
mW
−
24
W
−
17
W
−65
+150 °C
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
all diodes loaded
VALUE
370
UNIT
K/W
2000 Sep 25
3