BSP315 Ver la hoja de datos (PDF) - Siemens AG

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componentes Descripción

Fabricante

BSP315

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 315

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = -1.1 A, VGS = -10 V

2.4

Ω

2.0

RDS (on)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-60

-20

98%

typ

20

60

100 °C 160

Tj

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = -1 mA

-4.6

V

-4.0

VGS(th) -3.6

-3.2

-2.8

-2.4

98%

-2.0

-1.6

typ

-1.2

2%

-0.8

-0.4

0.0

-60

-20

20

60

100 °C 160

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS=0V, f = 1 MHz

10 4

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

-10 1

pF

C

10 3

A

I

F

-10 0

10 2

Ciss

Coss

Crss

10 1

0

-5 -10 -15 -20 -25 -30 V -40

VDS

Semiconductor Group

7

-10 -1

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

-10 -2

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0

VSD

Sep-12-1996

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