BM29F040 Ver la hoja de datos (PDF) - Fujitsu

Número de pieza

componentes Descripción

Fabricante

BM29F040

FLASH MEMORY CMOS 4M (512K ×8) BIT

Fujitsu 

MBM29F040C-55/-70/-90

s ERASE AND PROGRAMMING PERFORMANCE

Parameter

Min.

Limits

Typ.

Max.

Sector Erase Time

—

1

8

Byte Programming Time

—

8

150

Chip Programming Time

—

4.2

10

Erase/Program Cycle

100,000

—

—

Unit

Comments

sec

Excludes 00H programming

prior to erasure

µs

Excludes system-level

overhead

sec

Excludes system-level

overhead

cycles

s TSOP(I) PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

s PLCC PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Typ.

Max.

Unit

7

8

pF

8

10

pF

8.5

10

pF

Typ.

Max.

Unit

7

8

pF

8

10

pF

8.5

10

pF

36

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