BM29F040 Ver la hoja de datos (PDF) - Fujitsu

Número de pieza

componentes Descripción

Fabricante

BM29F040

FLASH MEMORY CMOS 4M (512K ×8) BIT

Fujitsu 

MBM29F040C-55/-70/-90

EMBEDDED ALGORITHMS

Start

Write Erase Command

Sequece

(See below)

Data Polling or Toggle Bit

Successfully Completed

Erasure Completed

Individual Sector/Multiple Sector

Chip Erase Command Sequence Erase Command Sequence

(Address/Command):

(Address/Command):

555H/AAH

555H/AAH

2AAH/55H

555H/80H

2AAH/55H

555H/80H

555H/AAH

2AAH/55H

555H/10H

555H/AAH

2AAH/55H

Sector Address/30H

Sector Address/30H

Sector Address/30H

Additional sector

erase commands

are optional.

Figure 4 Embedded EraseTM Algorithm

32

Share Link: