NXP Semiconductors
BAS16 series
High-speed switching diodes
12. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BAS16_SER_5
Modifications:
20080825
Product data sheet
-
BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 5 “Marking codes”: marking code amended for BAS16W
• Table 6 “Limiting values”: for BAS16, BAS16T, BAS16W and BAS516 change of
VRRM maximum value from 85 V to 100 V
• Table 6 “Limiting values”: for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of
VR maximum value from 75 V to 100 V
• Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj = 25 °C
• Table 8 “Characteristics”: change of IR maximum value from 1.0 µA to 0.5 µA for VR = 80 V
and Tj = 25 °C
• Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj = 150 °C
• Section 13 “Legal information”: updated
BAS16_4
20011010
Product specification
-
BAS16_3
BAS16H_1
20050415
Product data sheet
-
-
BAS16J_1
20070308
Product data sheet
-
-
BAS16L_1
20030623
Product specification
-
-
BAS16T_1
19980120
Product specification
-
-
BAS16VV_BAS16VY_3 20070420
Product data sheet
-
BAS16VV_BAS16VY_2
BAS16W_4
19990506
Product specification
-
BAS16W_3
BAS316_4
20040204
Product specification
-
BAS316_3
BAS516_1
19980831
Product specification
-
-
BAS16_SER_5
Product data sheet
Rev. 05 — 25 August 2008
© NXP B.V. 2008. All rights reserved.
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