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APT1004RBN Ver la hoja de datos (PDF) - Advanced Power Technology

Número de pieza
componentes Descripción
Fabricante
APT1004RBN
APT
Advanced Power Technology  APT
APT1004RBN Datasheet PDF : 4 Pages
1 2 3 4
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
APT1004R/1004R2BN
MIN TYP MAX UNIT
805 950
115 160 pF
37
60
35
55
4.3 6.5 nC
18
27
12
24
10
20
ns
33
50
14
27
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN
IS
Continuous Source Current
(Body Diode)
APT1004RBN
APT1004R2BN
ISM
Pulsed Source Current 1
(Body Diode)
APT1004RBN
APT1004R2BN
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
t rr
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
TYP
290
1.65
MAX
4.4
4.0
17.6
16
1.3
580
3.3
UNIT
Amps
Volts
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
ILM
Characteristic
Test Conditions / Part Number
Safe Operating Area
Safe Operating Area
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
Inductive Current Clamped
APT1004RBN
APT1004R2BN
MIN
180
180
17.6
16
TYP
MAX
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.01
Note:
t1
0.005
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
Watts
Amps

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