80EBU02 Ver la hoja de datos (PDF) - Vishay Semiconductors
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80EBU02 Datasheet PDF : 7 Pages
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80EBU02
Vishay High Power Products Ultrafast Soft Recovery Diode,
80 A FRED PtTM
180
160
140
DC
120
100 Square wave (D = 0.50)
80% Rated Vr applied
80
see note (1)
60
0 20 40 60 80 100 120
Average Forward Current - IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
70
IF = 160A
IF = 80A
60
IF = 40A
50
40
30
20 Vr = 160V
Tj = 125˚C
Tj = 25˚C
10
100
1000
di F /dt (A/µs )
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
120
RMS Limit
100
80
60
D = 0.01
D = 0.02
40
D = 0.05
D = 0.10
D = 0.20
20
D = 0.50
DC
0
0 20 40 60 80 100 120
Average Forward Current - IF(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
1200
1000
Vr = 160V
Tj = 125˚C
Tj = 25˚C
800
IF = 160A
IF = 80A
IF = 40A
600
400
200
0
100
1000
di F/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93024
Revision: 30-Oct-08
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