2SJ409(L), 2SJ409(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
–100
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
–1.0
—
—
Typ
—
—
—
—
—
0.12
0.16
Max Unit
—
V
—
V
±10 µA
–250 µA
–2.0 V
0.16 Ω
0.22 Ω
Forward transfer admittance |yfs|
7.5 12
—
S
Input capacitance
Ciss
—
1860 —
pF
Output capacitance
Coss —
680 —
pF
Reverse transfer capacitance Crss
—
145 —
pF
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
—
15
—
ns
—
115 —
ns
—
320 —
ns
—
170 —
ns
—
–1.05 —
V
Body to drain diode reverse trr
recovery time
—
280 —
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –80 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –10 A
VGS = –10 V*1
ID = –10 A
VGS = –4 V*1
ID = –10 A
VDS = –10 V*1
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –10 A
VGS = –10 V
RL = 3 Ω
IF = –20 A, VGS = 0
IF = –20 A, VGS = 0,
diF/dt = 50 A/µs
See characteristics curves of 2SJ221
3