DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SC5612 Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
2SC5612 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SC5612
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5612
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
z High Voltage
z Low Saturation Voltage
z High Speed
: VCBO = 2000 V
: VCE (sat) = 3 V (Max.)
: tf = 0.15µs (Typ.)
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
2000
V
CollectorEmitter Voltage
VCEO
900
V
EmitterBase Voltage
VEBO
5
V
DC
Collector Current
IC
22
A
Pulse
ICP
44
Base Current
IB
11
A
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
PC
220
W
Tj
150
°C
JEDEC
Tstg
55~150
°C
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-21F2A
temperature/current/voltage and the significant change in
Weight: 9.75 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-22

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]