2SC5218 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SC5218

Silicon NPN Epitaxial

Renesas Electronics 

2SC5218

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

9

V

1.5

V

50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V(BR)CBO

15

—

—

V

voltage

IC = 10 µA, IE = 0

Collector cutoff current

I CBO

—

—

1

µA

VCB = 12 V, IE = 0

I CEO

—

—

1

mA

VCE = 9 V, RBE =

Emitter cutoff current

I EBO

—

—

10

µA

VEB = 1.5 V, IC = 0

DC current transfer ratio

hFE

50

120 250

VCE = 5 V, IC = 20 mA

Collector output capacitance Cob

—

0.8 1.4 pF

VCB = 5 V, IE = 0,

f = 1 MHz

Gain bandwidth product

Power gain

fT

6.0

9.0

—

GHz VCE = 5 V, IC = 20 mA

PG

10

13

—

dB

VCE = 5 V, IC = 20 mA,

f = 900 MHz

Noise figure

NF

—

1.2 2.5 dB

VCE = 5 V, IC = 5 mA,

f = 900 MHz

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