B1628 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

B1628

PNP Silicon Epitaxial Transistor

TY Semiconductor 

Electrical Characteristics Ta = 25

Parameter

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain *

Base to Emitter Voltage *

Collector Saturation Voltage *

Collector Saturation Voltage *

Base Saturation Voltage *

Gain Bandwidth Product

Output Capacitance

Turn-on Time

Storage Time

Fall Time

* Pulsed: PW 350 ìs, Duty Cycle 2%.

Symbol

Testconditons

ICBO VCBO = -20 V, IE = 0

IEBO VEBO = -6.0 V, IC = 0

hFE1 VCE = -2.0 V, IC = -0.5 A

hFE2 VCE = -2.0 V, IC = -3.0 A

VBE VCE = -2.0 V, IC = -0.05 A

VCE(sat)1 IC = -2.0 A, IB = -0.1 A

VCE(sat)2 IC = -3.0 A, IB = -0.15 A

VBE(sat) IC = -2.0 A, IB = -0.1 A

fT VCE = –3.0 V, IE = 0.5 A

Cob VCB = –10 V, IE = 0, f = 1 MHz

ton

IC = -1.0 A, VCC = -10 V,

tstg RL = 5.0 ? , IB1 = -IB2 = -0.1 A,

tf

hFE Classification

Marking

hFE

ZX

140 280

ZY

200 400

ZZ

280 560

Product specification

2SB1628

Min

140

70

-600

Typ

280

-660

-240

-350

-0.95

320

45

70

110

40

Max Unit

-100 nA

-100 nA

560

-700

-350

-550

-1.2

mV

mV

mV

V

MHz

pF

ns

ns

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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