UTC 2SA1943
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
IC - VCE
-20
COMMON EMITTER
TC =25℃
-16
-800
-600
-400
-12
-250
-200
-150
-8
-100
IB = -10mA
-50
-4
-40
-30
-20
0
0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE, V CE (V)
-20
COMMON EMITTER
VCE = -5V
-16
IC - VBE
-12
-8
-4
TC =100℃
25
-25
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
BASE-EMITTER VOLTAGE, VBE (V)
-3
-1
-0.3
-0.1
-0.01
VCE(sat) - IC
TC =100℃
-25
25
COMMON EMITTER
IC / IB = 10
-0.1
-1
-10
-100
COLLECTOR CURRENT, IC (A)
300
TC =100℃
100
hFE - IC
30 25
-25
10
COMMON EMITTER
VCE = -5V
0
-0.01
-0.1
-1
-10
-100
COLLECTOR CURRENT, IC (A)
SAFE OPERATING AREA
-50
IC MAX. (PULSED)※
-30
IC MAX.
1ms※
(CONTINUOUS)
-10
10ms※
100ms※
-5
-3
DC OPERATION
TC =100℃
-1
-0.5
-0.3
※ SINGLE NONREPETITIVE
PULSE TC = 25℃
-0.1 CURVES MUST BE
DERATED LINEARLY
-0.05 WITH INCREASE IN
TEMPERATURE.
-0.03
-3
-10 -30
-100
VCEO MAX.
-300
-1000
COLLECTOR-EMITTER VOLTAGE, VCE (V)
UTC UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
2
QW-R214-006,A