SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1006 2SA1006A 2SA1006B
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
VBEsat
ICBO
IEBO
hFE-1
hFE-2
Cob
fT
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
Base-emitter saturation voltage
IC=-0.5A ;IB=-50mA
Collector cut-off current
VCB=-150V ;IE=0
Emitter cut-off current
VEB=-3V; IC=0
DC current gain
IC=-5mA ; VCE=-5V
DC current gain
IC=-150mA ; VCE=-5V
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
Transition frequency
IC=-100mA ; VCE=10V
MIN TYP. MAX UNIT
-1.0
V
-1.5
V
-1
µA
-1
µA
30
60
320
45
pF
80
MHz
hFE-2 Classifications
R
Q
P
60-120 100-200 160-320
2