2N6296 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

componentes Descripción

Fabricante

2N6296

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon PNP Power Transistors

www.jmnic.com

2N6296 2N6297

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2N6296

2N6297

IC=50mA ; IB=0

VCEsat-1 Collector-emitter saturation voltage IC=2A ;IB=8mA

VCEsat-2 Collector-emitter saturation voltage IC=4A ;IB=40mA

VBEsat Base-emitter saturation voltage

IC=4A ;IB=40mA

VBE

Base -emitter on voltage

ICEX

Collector cut-off current

ICEO

Collector cut-off current

IC=2A ; VCE=3V

VCE=RatedVCE;VBE(off)=1.5V

TC=150℃

VCE=1/2Rated VCEO; IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=2A ; VCE=3V

hFE-2

DC current gain

IC=4A ; VCE=3V

fT

Transition frequency

IC=1.5A ; VCE=3V;f=1.0MHz

COB

Output capacitance

IE=0 ; VCB=10V;f=0.1MHz

MIN TYP. MAX UNIT

60

V

80

2.0

V

3.0

V

4.0

V

2.8

V

0.5

5.0

mA

0.5

mA

2.0

mA

750

18000

100

4.0

MHz

200

pF

JMnic

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