Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
2N2484 Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N2484
SILICON PLANAR EPITAXIAL TRANSISTORS
Comset Semiconductors
2N2484 Datasheet PDF : 3 Pages
1
2
3
NPN 2N2484
Symbol
Ratings
h
FE
(*)
DC Current Gain
V
CE(SAT)
V
BE
Collector-Emitter saturation Voltage
Base-Emitter Voltage
Symbol
Ratings
f
T
Transition frequency
h
fe
C
CBO
C
EBO
Small signal current gain
Collector-Base Capacitance
Emitter-Base Capacitance
NF
Noise figure
(*) Pulse conditions : tp < 300
µ
s,
δ
=1%
Test Condition(s)
I
C
=1 µA, V
CE
=5 V
I
C
=10 µA, V
CE
=5 V
I
C
=100 µA, V
CE
=5 V
I
C
=500 µA, V
CE
=5 V
I
C
=1mA, V
CE
=5 V
I
C
=10 mA, V
CE
=5 V
I
C
=10 µA, V
CE
=5 V
T
amb
= -55°
I
C
=1 mA, I
B
=0.1 mA
I
C
=100 µA, V
CE
=5 V
Test Condition(s)
I
C
=50 µA, V
CE
= 5 V
f= 5 MHz
I
C
=500 µA, V
CE
= 5 V
f= 30 MHz
I
C
=1 mA, V
CE
=5.0 V
f= 1 KHz
I
E
= 0 ,V
CB
=5 V
f = 1MHz
I
C
= 0 ,V
EB
=0.5 V
f = 1MHz
I
C
= 0
V
CE
=5.0 V
R
g
= 10 k
Ω
f = 100 Hz
f = 1 kHz
f = 10 kHz
f = 10 to
10000 Hz
Min Typ Mx Unit
30 200 -
100 290 500
175 375 -
200 430 -
-
250 450 -
- 430 800
20 - -
- 0.2 0.35
0.5 0.57 0.7
V
Min Typ Mx Unit
15 20 -
MHz
60 78 -
150 400 900 -
- 3.5 6 pF
- 3.5 6 pF
- 4 10
- 1.8 3
- 0.6 2
dB
- 1.8 3
COMSET SEMICONDUCTORS
2/3
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]