1N6263W Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

1N6263W

SMALL SIGNAL DIODES

TY Semiconductor 

Product specification

1N6263W

Features

Low Forward Voltage Drop

Guard Ring Constuction for Transient Protection

Fast Switching Time

Low Reverse Capacitance

Surface Mount Package ldeally Suited for Automatic Insertion

SOD-123

2.7+0.1

-0.1

Unit: mm

1.1+0.05

-0.05

3.7+0.1

-0.1

0.50

0.35

0.1max

Absolute Maximum Ratings Ta = 25

Paramater

Symbol

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

DC Blocking Volatge

VR

RMS Reverse Voltage

VR(RMS)

Forward Continuous Current

IF

Non-Repetitive Peak Forward Surge Current @ t 1.0s

IFSM

@ t = 10 ms

Power Dissipation (Note1)

Pd

Thermal Resistance, Junction to Ambient Air (Note 1)

IèJA

Operating Temperature Range

Tj

Storage Temperature Range

TSTG

Note:

1. Part mounted on FR-4 board with recommended pad layout.

Value

60

42

15

50

2.0

333

300

-55 to+125

-55 to+150

Unit

V

V

mA

mA

A

mW

/W

Electrical Characteristics Ta = 25

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Reverse Breakdown Voltage (Note 2) V(BR)R

IR = 10 A

60

V

Reverse Leakage Current (Note2)

IRM

VR = 50 V

200

nA

Forward Voltage Drop (Note2)

VFM

IF = 1.0 mA

IF = 15 mA

0.41

V

1.00

Total Capacitance

CT

VR = 0v, f = 1.0 MHz

2.0

pF

Reverse Recovery Time

IF =IR = 5.0 mA

trr

Irr = 0.1 x IR, RL = 100

1.0

ns

Note:

2. Short duration test pulse used to minimize self-heating effect.

Marking

Marking

SB

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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