1N5225B Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

1N5225B

Silicon Epitaxial Planar Zener Diodes for Voltage Regulation

Renesas Electronics 

1N5223B through 1N5258B

Electrical Characteristics (cont.)

Zener Voltage

Reverse Current

Dynamic Resistance

Type No.

VZ (V)

Test

Condition

IZ (mA)

IR (µA)

Max

Test

Condition

VR (V)

ZZT (Ω)

Max

Test

Condition

IZT (mA)

ZZK (Ω)

Max

Test

Condition

IZK (mA)

1N5251B 22 ± 5 (%)

5.6

0.1

17

29

5.6

600

0.25

1N5252B 24 ± 5 (%)

5.2

0.1

18

33

5.2

600

0.25

1N5253B 25 ± 5 (%)

5.0

0.1

19

35

5.0

600

0.25

1N5254B 27 ± 5 (%)

4.6

0.1

21

41

4.6

600

0.25

1N5255B 28 ± 5 (%)

4.5

0.1

21

44

4.5

600

0.25

1N5256B 30 ± 5 (%)

4.2

0.1

23

49

4.2

600

0.25

1N5257B 33 ± 5 (%)

3.8

0.1

25

58

3.8

700

0.25

1N5258B 36 ± 5 (%)

3.4

0.1

27

70

3.4

700

0.25

Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25°C to 125°C

2. Tested with DC, IF = 200 mA

(Ta = 25°C)

γZ (%/°C) *1

Max

+0.087

+0.088

+0.089

+0.090

+0.091

+0.091

+0.092

+0.093

VF*2 (V)

Max

1.1

1.1

1.1

1.1

1.1

1.1

1.1

1.1

Rev.3.00 Aug 22, 2005 page 3 of 5

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